Inventor · Portland, OR, US

Roza Kotlyar

47Patents

8h-index

64Co-inventors

74Inventor score

Filing activity: Dec 30, 2009 → Nov 28, 2022

Most-cited inventions

Patent	Title	Area	Cited by	Status
US8901537B2	Transistors with high concentration of boron doped germanium	Electricity	47	Active
US8847281B2	High mobility strained channels for fin-based transistors	Electricity	39	Active
US8890119B2	Vertical nanowire transistor with axially engineered semiconductor and gate metallization	Emerging Cross-Sectional Technologies	20	Active
US9306063B2	Vertical transistor devices for embedded memory and logic technologies	Electricity	17	Active
US9627384B2	Transistors with high concentration of boron doped germanium	Electricity	12	Active
US8558279B2	Non-planar device having uniaxially strained semiconductor body and method of making same	Electricity	11	Active
US10868246B2	Conductive bridge random access memory (CBRAM) devices with low thermal conductivity electrolyte sublayer	Physics	9	Active
US9184294B2	High mobility strained channels for fin-based transistors	Electricity	8	Active
US8890120B2	Tunneling field effect transistors (TFETs) for CMOS approaches to fabricating N-type and P-type TFETs	Electricity	8	Active
US10790281B2	Stacked channel structures for MOSFETs	Electricity	7	Active
US9293560B2	Vertical nanowire transistor with axially engineered semiconductor and gate metallization	Emerging Cross-Sectional Technologies	6	Active
US8592803B2	Germanium-based quantum well devices	Electricity	6	Active
US8193523B2	Germanium-based quantum well devices	Electricity	6	Active
US9935107B2	CMOS FinFET device with dual strained cladding layers on relaxed SiGe fins, and method of fabricating the same	Electricity	4	Active
US10153372B2	High mobility strained channels for fin-based NMOS transistors	Electricity	3	Active
US11107891B2	Hexagonal arrays for quantum dot devices	Electricity	3	Active
US11387320B2	Transistors with high concentration of germanium	Electricity	2	Active
US9219135B2	Germanium-based quantum well devices	Electricity	2	Active
US11158731B2	Quantum well stacks for quantum dot devices	Electricity	2	Active
US9871117B2	Vertical transistor devices for embedded memory and logic technologies	Electricity	2	Active
US9893149B2	High mobility strained channels for fin-based transistors	Electricity	2	Active
US10665770B2	Fin strain in quantum dot devices	Electricity	1	Active
US9911835B2	Tunneling field effect transistors (TFETs) for CMOS architectures and approaches to fabricating N-type and P-type TFETs	Electricity	1	Active
US10600787B2	Silicon PMOS with gallium nitride NMOS for voltage regulation	Electricity	1	Active
US9871106B2	Heterogeneous pocket for tunneling field effect transistors (TFETs)	Electricity	1	Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.