Patent · US Active

Memory device and operation method thereof

US10666467B2 · kind B2 · utility

1Cited by
12References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 22, 2018
Grant dateMay 26, 2020
Priority date
Expiry dateAug 22, 2038

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2207/2254
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A memory device includes memory cell array including a plurality of memory cells that store data, a first transmitter that transmits the data to an external device through a first data line, and a ZQ controller that performs a ZQ calibration operation to generate a first ZQ code for impedance matching of the first data line. The first transmitter encodes the first ZQ code and the first data based on a first clock and drives the first data line based on the encoded result based on a second clock.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.