Ionized physical vapor deposition (IPVD) apparatus and method for an inductively coupled plasma sweeping source
US10672596B2 · kind B2 · utility
36Cited by
4References
28Claims
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Key dates
| Filing date | Mar 2, 2017 |
| Grant date | Jun 2, 2020 |
| Priority date | — |
| Expiry date | Mar 2, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3429
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Embodiments of methods and systems for an inductively coupled plasma sweeping source for an IPVD system. In an embodiment, a method includes providing a large size substrate in a processing chamber. The method may also include generating from a metal source a sputtered metal onto the substrate. Additionally, the method may include creating a high density plasma from a high density plasma source and applying the high density plasma in a sweeping operation without involving moving parts. The method may also include controlling a plurality of operating variables in order to meet one or more plasma processing objectives.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.