Jozef Brcka
46Patents
17h-index
25Co-inventors
77Inventor score
Filing activity: Mar 26, 1999 → Mar 2, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6494998B1 | Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma using an internal inductive element | Electricity | 461 | Expired |
| US6446572B1 | Embedded plasma source for plasma density improvement | Electricity | 266 | Expired |
| US6287435A | Method and apparatus for ionized physical vapor deposition | Electricity | 77 | Expired |
| US7341959B2 | Plasma enhanced atomic layer deposition system and method | Electricity | 73 | Expired |
| US7435454B2 | Plasma enhanced atomic layer deposition system and method | Electricity | 64 | Expired |
| US6523493B1 | Ring-shaped high-density plasma source and method | Electricity | 53 | Expired |
| US10672596B2 | Ionized physical vapor deposition (IPVD) apparatus and method for an inductively coupled plasma sweeping source | Electricity | 36 | Active |
| US6237526A | Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma | Electricity | 33 | Expired |
| US8103492B2 | Plasma fluid modeling with transient to stochastic transformation | Physics | 31 | Active |
| US6666982B2 | Protection of dielectric window in inductively coupled plasma generation | Electricity | 28 | Expired |
| US6417626B1 | Immersed inductively—coupled plasma source | Electricity | 27 | Expired |
| US7651570B2 | Solid precursor vaporization system for use in chemical vapor deposition | Chemistry; Metallurgy | 26 | Expired |
| US6474258B2 | Apparatus and method for improving plasma distribution and performance in an inductively coupled plasma | Electricity | 25 | Expired |
| US6719886B2 | Method and apparatus for ionized physical vapor deposition | Electricity | 24 | Expired |
| US8409398B2 | Control of ion angular distribution function at wafer surface | Electricity | 22 | Active |
| US6853953B2 | Method for characterizing the performance of an electrostatic chuck | Electricity | 22 | Expired |
| US7867409B2 | Control of ion angular distribution function at wafer surface | Electricity | 18 | Active |
| US8715455B2 | Multi-zone gas distribution system for a treatment system | Electricity | 16 | Active |
| US6652711B2 | Inductively-coupled plasma processing system | Electricity | 15 | Expired |
| US7426900B2 | Integrated electrostatic inductive coupling for plasma processing | Electricity | 14 | Expired |
| US7132128B2 | Method and system for depositing material on a substrate using a solid precursor | Chemistry; Metallurgy | 13 | Expired |
| US7976674B2 | Embedded multi-inductive large area plasma source | Electricity | 11 | Active |
| US7771562B2 | Etch system with integrated inductive coupling | Electricity | 9 | Active |
| US7075771B2 | Apparatus and methods for compensating plasma sheath non-uniformities at the substrate in a plasma processing system | Electricity | 8 | Expired |
| US7273533B2 | Plasma processing system with locally-efficient inductive plasma coupling | Electricity | 6 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.