Patent · US Active

Semiconductor device with redistribution layers on partial encapsulation and non-photosensitive passivation layers

US10672699B2 · kind B2 · utility

0Cited by
11References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 29, 2019
Grant dateJun 2, 2020
Priority date
Expiry dateJan 29, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/18162
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device with redistribution layers on partial encapsulation is disclosed and may include providing a carrier with a non-photosensitive protection layer, forming a pattern in the non-photosensitive protection layer, providing a semiconductor die with a contact pad on a first surface, and bonding the semiconductor die to the non-photosensitive protection layer such that the contact pad aligns with the pattern formed in the non-photosensitive protection layer. A second surface opposite to the first surface of the semiconductor die, side surfaces between the first and second surfaces of the semiconductor die, and a portion of a first surface of the non-photosensitive protection layer may be encapsulated with an encapsulant. The carrier may be removed leaving the non-photosensitive protection layer bonded to the semiconductor die. A redistribution layer may be formed on the contact pad and a second surface of the non-photosensitive protection layer opposite to the first surface.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.