Fabrication of correlated electron material (CEM) devices
US10672982B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2018 |
| Grant date | Jun 2, 2020 |
| Priority date | — |
| Expiry date | Nov 30, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In particular embodiments a method may include forming a structure on a first portion of a substrate while maintaining a second portion of the substrate exposed. A sealing layer may be deposited over the structure and over at least a portion of the exposed second portion of the substrate. A conductive via may be formed by way of a dry etch through the sealing layer to contact the exposed metal layer. In embodiments, an etch-stop control layer may be utilized to control an etching process prior to formation of metal contacts over the CEM switch and the conductive via.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.