Non-volatile memory device and method of blank check
US10679712B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 4, 2018 |
| Grant date | Jun 9, 2020 |
| Priority date | — |
| Expiry date | Dec 11, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/0466
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile memory device and methods for operating the same are provided. The memory device may have multiple complementary memory cells. The method of blank check includes detecting a state value of each of the true and complementary transistors, generating an upper state value, Wherein a first predetermined amount of the true and complementary transistors have greater state values than the upper state value, generating a lower state value, wherein a second predetermined amount of the true and complementary transistors have less state values than the lower state value, generating a state value range based on a difference between the upper state value and the lower state value, and comparing the state value range to a threshold value to determine whether the plurality of complementary memory cells is in a blank state or a non-blank state. Other embodiments are also disclosed herein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.