James Pak
20Patents
4h-index
21Co-inventors
63Inventor score
Filing activity: Aug 10, 2001 → Jun 26, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9853039B1 | Split-gate flash cell formed on recessed substrate | Electricity | 11 | Active |
| US9368606B2 | Memory first process flow and device | Electricity | 8 | Active |
| US10591523B2 | Capacitive sensor and manufacturing method thereof | Electricity | 7 | Active |
| US10014380B2 | Memory first process flow and device | Electricity | 4 | Active |
| US10872898B2 | Embedded non-volatile memory device and fabrication method of the same | Electricity | 3 | Active |
| US10068912B1 | Method of reducing charge loss in non-volatile memories | Electricity | 3 | Active |
| US9917166B2 | Memory first process flow and device | Electricity | 3 | Active |
| US8724388B2 | Adaptively programming or erasing flash memory blocks | Physics | 3 | Active |
| US6635426B2 | Mixed intercalator and electrochemical detection of DNA using same | Emerging Cross-Sectional Technologies | 1 | Expired |
| US12029041B2 | Method of forming high-voltage transistor with thin gate poly | Electricity | 1 | Active |
| US10242996B2 | Method of forming high-voltage transistor with thin gate poly | Electricity | 1 | Active |
| US6809201B2 | Intercalator suitable for electrochemical detection of double strand DNAs and a process for preparing thereof | Physics | 0 | Expired |
| US10818761B2 | Memory first process flow and device | Electricity | 0 | Active |
| US10403731B2 | Memory first process flow and device | Electricity | 0 | Active |
| US10679712B2 | Non-volatile memory device and method of blank check | Physics | 0 | Active |
| US9818755B1 | Split-gate flash cell formed on recessed substrate | General | 0 | Revoked |
| US10497710B2 | Split-gate flash cell formed on recessed substrate | Electricity | 0 | Active |
| US10957703B2 | Method of reducing charge loss in non-volatile memories | Electricity | 0 | Active |
| US11342429B2 | Memory first process flow and device | Electricity | 0 | Active |
| US11690227B2 | Method of forming high-voltage transistor with thin gate poly | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.