Patent · US Active

Microwave plasma source

US10679832B2 · kind B2 · utility

1Cited by
2References
23Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJun 28, 2018
Grant dateJun 9, 2020
Priority date
Expiry dateJun 28, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L22/26
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

The disclosure provides a plasma source, an excitation system for excitation of a plasma, and a method of operating an excitation measurement system. In one embodiment, the plasma source includes: (1) a coaxial radio frequency (RF) resonator including a first end, a second end, an inner electrode and an outer electrode, (2) a radio frequency interface electrically coupled to the inner and outer electrode and configured to provide an RF signal to the coaxial RF resonator, (3) a flange positioned at the first end of the resonator and defining a plasma cavity, and (4) a window positioned between the first end of the resonator and the flange, and forming one side of the plasma cavity, whereby the coaxial RF resonator is isolated from the plasma.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.