Fin field effect transistor (FinFET) device structure with insulating structure over fin isolation structure and method for forming the same
US10679856B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 5, 2018 |
| Grant date | Jun 9, 2020 |
| Priority date | — |
| Expiry date | Dec 5, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a FinFET device structure is provided. The method for forming a FinFET device structure includes forming a fin structure and a fin isolation structure over a substrate, and forming a metal stack over the fin structure and the fin isolation structure. The method for forming a FinFET device structure also includes partially removing the metal stack so that a top surface of the fin isolation structure is exposed, and forming a dielectric material over the metal stack and covering the top surface of the fin isolation structure. The method for forming a FinFET device structure further includes patterning the dielectric material and the metal stack to form a metal gate structure and an insulating structure over the metal gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.