Method for assembling two substrates of different natures via a ductile intermediate layer
US10679963B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 26, 2014 |
| Grant date | Jun 9, 2020 |
| Priority date | — |
| Expiry date | Jan 14, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3511
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a heterostructure, including: contacting a first substrate having a first coefficient of thermal expansion and a second substrate having a different second coefficient of thermal expansion; annealing an assembly formed by contacting the first substrate and the second substrate; after annealing, returning the assembly to room temperature; providing, before the contacting, at least one intermediate layer at a surface of at least one of the first and second substrates, the at least one intermediate layer being made of a material which is ductile during the annealing and returning to room temperature; performing the contacting with the at least one intermediate layer sandwiched between the first and the second substrates; upon returning to room temperature, applying an outer pressure to the assembly to maintain it compressed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.