Electronic device including a high electron mobility transistor including a gate electrode
US10680094B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 1, 2018 |
| Grant date | Jun 9, 2020 |
| Priority date | — |
| Expiry date | Aug 10, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electronic device can include a channel layer including AlzGa(1-z)N, where 0≤z≤0.1; a gate dielectric layer; and a gate electrode of a high electron mobility transistor (HEMT). The gate dielectric layer can be disposed between the channel layer and the gate electrode. The gate electrode includes a gate electrode film that contacts the gate dielectric layer, wherein the gate electrode film can include a material, wherein the material has a sum of an electron affinity and a bandgap energy of at least 6 eV. In some embodiments, the material can include a p-type semiconductor material. The particular material for the gate electrode film can be selected to achieve a desired threshold voltage for an enhancement-mode HEMT. In another embodiment, a portion of the barrier layer can be left intact under the gate structure. Such a configuration can improve carrier mobility and reduce Rdson.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.