Microelectromechanical device, method for manufacturing a microelectromechanical device, and method for manufacturing a system on chip using a CMOS process

US10683203B2 · kind B2 · utility

Assignee

• Infineon Technologies Dresden GmbH & Co. KG · DE

Inventors

• Thoralf Kautzsch · Dresden, DE
• Steffen Bieselt · Wehlen, DE
• Heiko Froehlich · Radebeul, DE
• Andre Roeth · Dresden, DE
• Maik Stegemann · Freital, DE
• Mirko Vogt · Dresden, DE

Key dates

• Filing date: Apr 12, 2018
• Grant date: Jun 16, 2020
• Expiry date: Jul 11, 2038

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B81C2203/0714
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A microelectromechanical systems (MEMS) device is provided and includes a bulk semiconductor substrate, a cavity formed in the bulk semiconductor substrate, a movably suspended mass, a cap structure and a capacitive structure is shown. The movably suspended mass is defined in the bulk semiconductor substrate by one or more trenches extending from a main surface area of the bulk semiconductor substrate to the cavity. The cap is structure arranged on the main surface area of the bulk semiconductor substrate. The capacitive structure comprises a first electrode structure arranged on the movably suspended mass and a second electrode structure arranged at the cap structure such that the first electrode structure and the second electrode structure are spaced apart in a direction perpendicular to the main surface area of the bulk semiconductor substrate.