Patent · US Active

Semiconductor device with photonic and electronic functionality and method for manufacturing a semiconductor device

US10684412B2 · kind B2 · utility

0Cited by

0References

16Claims

0Family size

Assignee

AMS AG · AT

Inventors

Jochen Kraft · Bruck an der Mur, AT
Joerg Siegert · Graz, AT

Key dates

Filing date	Aug 25, 2016
Grant date	Jun 16, 2020
Priority date	—
Expiry date	Nov 21, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2224/80896
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device has a semiconductor substrate and a first metallization stack arranged on the substrate. The substrate has and/or carries a plurality of electronic circuit elements. The first metallization stack has electrically insulating layers and at least one metallization layer. The semiconductor device further has a second metallization stack arranged on the first metallization stack and comprising further electrically insulating layers and an optical waveguide layer. The optical waveguide layer has at least one optical waveguide structure. Furthermore, one of the electrically insulating layers and one of the further electrically insulating layers are in direct contact with each other and form a pair of directly bonded layers.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.