Mirror arrangement for lithography exposure apparatus and optical system comprising mirror arrangement

US10684466B2 · kind B2 · utility

Assignee

• Carl Zeiss SMT GmbH · DE

Inventors

• Wouter Bernardus Johannes Hakvoort · Enschede, NL
• Richard Petrus Hogervorst · Enschede, NL
• Petrus Theodorus Rutgers · Hengelo, NL
• Kerstin Hild · Schwäbisch Gmünd, DE
• Toralf Gruner · Hennef (Sieg), DE

Key dates

• Filing date: Jan 16, 2018
• Grant date: Jun 16, 2020
• Expiry date: Oct 20, 2038

Classification

• Technology area (CPC G): Physics
• CPC primary: G21K1/062
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

Mirror elements (2a, 2b) include a substrate (4a, 4b) and a multilayer arrangement (5a, 5b). The multilayer arrangement includes a reflective layer system (6a, 6b) having a radiation entrance surface (7a, 7b) and a piezoelectric layer (8a, 8b) arranged between the radiation entrance surface and the substrate. Each mirror element includes an electrode arrangement (9a, 9b, 9c) associated with the piezoelectric layer. A layer thickness (tp) of the piezoelectric layer is controlled by the electric field generated. An interconnection arrangement (10) electrically interconnects adjacent electrodes of adjacent electrode arrangements. According to one formulation, the interconnection arrangement generates an electric field in a gap region (11) between the adjacent electrodes. According to another, an electric resistance (Ri) of the interconnection arrangement in the gap region is greater than an electric resistance (Rw) of the adjacent electrodes and less than an electric resistance (Rl) of the piezoelectric layers of adjacent electrode arrangements.