Methods for forming a silicon germanium tin layer and related semiconductor device structures
US10685834B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 21, 2018 |
| Grant date | Jun 16, 2020 |
| Priority date | — |
| Expiry date | May 21, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/547
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for forming a forming a silicon germanium tin (SiGeSn) layer is disclosed. The method may include, providing a substrate within a reaction chamber, exposing the substrate to a pre-deposition precursor pulse, which comprises tin tetrachloride (SnCl4), exposing the substrate to a deposition precursor gas mixture comprising a hydrogenated silicon source, germane (GeH4), and tin tetrachloride (SnCl4), and depositing the silicon germanium tin (SiGeSn) layer over a surface of the substrate. Semiconductor device structures including a silicon germanium tin (SiGeSn) layer formed by the methods of the disclosure are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.