Substrate processing method and substrate processing apparatus
US10685858B2 · kind B2 · utility
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3References
8Claims
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Key dates
| Filing date | Jun 27, 2018 |
| Grant date | Jun 16, 2020 |
| Priority date | — |
| Expiry date | Jun 27, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6708
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The substrate processing method according to an exemplary embodiment includes a low temperature dissolving processing and an etching processing. The low temperature dissolving processing dissolves oxygen in an alkaline aqueous solution cooled to a predetermined temperature lower than the room temperature. The etching processing etches a substrate by supplying the alkaline aqueous solution in which oxygen is dissolved to the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.