Etchant composition with high selectivity to silicon nitride
US10689572B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 7, 2019 |
| Grant date | Jun 23, 2020 |
| Priority date | — |
| Expiry date | Feb 7, 2039 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09K13/08
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Provided is an etchant composition for a silicon nitride film, and more particularly, to an etchant composition with a high selectivity to a silicon nitride film, which is used to etch away a silicon nitride film in semiconductor process and which selectively has a high etching rate for the silicon nitride film compared to a silicon oxide film in a high temperature etch process, in which the etchant composition with the high selectivity selectively etches the silicon nitride film at a selectivity of 2000:1 or higher between the silicon nitride film and the silicon oxide film which are in a stack structure, and minimizes damages to the silicon oxide film and etching rate, and does not cause re-growth of the silicon oxide film over the process time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.