RF substrate bias with high power impulse magnetron sputtering (HIPIMS)
US10692707B2 · kind B2 · utility
1Cited by
5References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 10, 2013 |
| Grant date | Jun 23, 2020 |
| Priority date | — |
| Expiry date | Nov 18, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32944
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An apparatus for generating sputtering of a target to produce a coating on a substrate is provided. The apparatus comprises a magnetron including a cathode and an anode. A power supply is operably connected to the magnetron and at least one capacitor is operably connected to the power supply. A first switch is also provided. The first switch operably connects the power supply to the magnetron to charge the magnetron and the first switch is configured to charge the magnetron according to a first pulse. An electrical bias device is operably connected to the substrate and configured to apply a substrate bias.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.