Wafer processing method for reforming protective film
US10692721B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 12, 2017 |
| Grant date | Jun 23, 2020 |
| Priority date | — |
| Expiry date | Feb 23, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/68327
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed herein is a wafer processing method including a protective film forming step of forming a protective film with which the whole of a surface of a wafer is coated, a laser beam irradiation step of irradiating the wafer with a laser beam along streets to remove a functional layer and expose a substrate, a protective film detecting step of detecting the coating state of the protective film in plural device regions over the wafer after the laser beam irradiation, a protective film re-forming step of forming the protective film again in such a manner that the protective film covers each device region if a part that is not coated with the protective film exists in the device regions, a plasma irradiation step of carrying out plasma irradiation for the wafer, and a dividing step of dividing the wafer by cutting along the streets.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.