Semiconductor device and method to fabricate the semiconductor device
US10692758B1 · kind B1 · utility
0Cited by
3References
10Claims
0Family size
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Key dates
| Filing date | Dec 6, 2018 |
| Grant date | Jun 23, 2020 |
| Priority date | — |
| Expiry date | Dec 6, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1047
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A structure of semiconductor device includes a substrate, having a dielectric layer on top. The structure further includes at least two metal elements being adjacent, disposed in the dielectric layer, wherein an air gap is existing between the two metal elements. A porous dielectric layer is disposed over the substrate, sealing the air gap. An inter-layer dielectric layer disposed on the porous dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.