3D NAND high aspect ratio structure etch

US10692880B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Zhenjiang Cui · San Jose, US
• Hanshen Zhang · Cupertino, US
• Anchuan Wang · San Jose, US
• Zhijun Chen · San Jose, US
• Nitin K. Ingle · San Jose, US

Key dates

• Filing date: Dec 27, 2017
• Grant date: Jun 23, 2020
• Expiry date: Dec 27, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B41/27
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Embodiments of the present disclosure provide methods for forming features in a film stack. The film stack may be utilized to form stair-like structures with accurate profiles control in manufacturing three dimensional (3D) stacking of semiconductor chips. In one example, a method includes exposing a substrate having a multi-material layer formed thereon to radicals of a remote plasma to form one or more features through the multi-material layer, the one or more features exposing a portion of a top surface of the substrate, and the multi-material layer comprising alternating layers of a first layer and a second layer, wherein the remote plasma is formed from an etching gas mixture comprising a fluorine-containing chemistry, and wherein the process chamber is maintained at a pressure of about 2 Torr to about 20 Torr and a temperature of about −100° C. to about 100° C.