MTJ bottom metal via in a memory cell and method for producing the same
US10693054B2 · kind B2 · utility
2Cited by
2References
11Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 26, 2018 |
| Grant date | Jun 23, 2020 |
| Priority date | — |
| Expiry date | Jul 26, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
Abstract
A method of forming a memory cell with a high aspect ratio metal via formed underneath a metal tunnel junction (MTJ) and the resulting device are provided. Embodiments include a device having a metal via formed underneath a metal tunnel junction (MTJ) in a memory cell, and the metal via has an aspect ratio smaller than 2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.