Patent · US Active

Regulating interface layer formation for two-terminal memory

US10693062B2 · kind B2 · utility

3Cited by

7References

20Claims

0Family size

Assignee

CrossBar, Inc. · US

Inventors

Sundar Narayanan · Santa Clara, US
Sung Hyun Jo · Sunnyvale, US
Liang Zhao · Dalian, CN

Key dates

Filing date	Dec 6, 2016
Grant date	Jun 23, 2020
Priority date	—
Expiry date	Dec 6, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH10N70/883

Abstract

Provision of fabrication, construction, and/or assembly of a two-terminal memory device is described herein. The two-terminal memory device can include an active region with a silicon bearing layer, an interface layer, and an active metal layer. The interface layer can be grown on the silicon bearing layer, and the growth of the interface layer can be regulated with N2O plasma.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.