Semiconductor apparatus
US10700054B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 31, 2018 |
| Grant date | Jun 30, 2020 |
| Priority date | — |
| Expiry date | Dec 31, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/411
Abstract
A semiconductor apparatus includes a semiconductor substrate provided with a plurality of diode ranges and a plurality of IGBT ranges. The IGBT ranges and the diode ranges are alternately arranged along a first direction in plan view of the semiconductor substrate along a thickness direction of the semiconductor substrate. Each diode range is provided with a plurality of n-type cathode regions and a plurality of p-type current-limiting regions in a range of being in contact with a lower electrode. The cathode regions and the current-limiting regions are alternately arranged along a second direction intersecting the first direction in each diode range. Each IGBT range is provided with a p-type collector region in a range of being in contact with the lower electrode. The collector region in each IGBT range is in contact with each cathode region in the adjacent diode range.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.