Patent · US Active

Wide band gap semiconductor device and a method for forming a wide band gap semiconductor device

US10700168B2 · kind B2 · utility

1Cited by

1References

15Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Josef Lutz · Rohrau, AT
Roland Rupp · Achern, DE
Hans-Joachim Schulze · Taufkirchen, DE

Key dates

Filing date	Dec 26, 2018
Grant date	Jun 30, 2020
Priority date	—
Expiry date	Dec 26, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/8503
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A wide band gap semiconductor device includes a first doping region of a first conductivity type and a second doping region of a second conductivity type. A drift portion of the second doping region has a first average net doping concentration lower than 1e17 cm−3. A highly doped portion of the second doping region has a second average net doping concentration higher than 5e18 cm−3. A compensation portion of the second doping region located between the drift and highly doped portions extends from a first area with a net doping concentration higher than 1e16 cm−3 and lower than 1e17 cm−3 to a second area with a net doping concentration higher than 5e18 cm−3. A maximum gradient of the net doping concentration within at least a part of the compensation portion extending from the second area towards the first area for at least 100 nm is lower than 5e22 cm−4.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.