Semiconductor device and method for forming the same
US10700202B2 · kind B2 · utility
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1References
20Claims
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Assignee
Inventors
Key dates
| Filing date | Oct 28, 2018 |
| Grant date | Jun 30, 2020 |
| Priority date | — |
| Expiry date | Feb 1, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is disclosed. The semiconductor device comprises a substrate, a gate structure disposed on the substrate, a spacer disposed on the substrate and covering a sidewall of the gate structure, an air gap sandwiched between the spacer and the substrate, and a source/drain region disposed in the substrate and having a faceted surface exposed from the substrate, wherein the faceted surface borders the substrate on a boundary between the air gap and the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.