Semiconductor device and methods of manufacture
US10700208B2 · kind B2 · utility
1Cited by
19References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2018 |
| Grant date | Jun 30, 2020 |
| Priority date | — |
| Expiry date | Dec 18, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6219
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and method of manufacture are provided. In an embodiment a first contact is formed to a source/drain region and a dielectric layer is formed over the first contact. An opening is formed to expose the first contact, and the opening is lined with a dielectric material. A second contact is formed in electrical contact with the first contact through the dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.