Master alloy for sputtering target and method for producing sputtering target
US10704137B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2015 |
| Grant date | Jul 7, 2020 |
| Priority date | — |
| Expiry date | Dec 21, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3426
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Provided is a master alloy for a sputtering target, wherein, when elements constituting the master alloy are following X1, X2, Y1, Y2, Y2, and Y3; specifically, where X1 is one or two types of Ta or W; X2 is at least one type of Ru, Mo, Nb or Hf; Y1 is one or two types of Cr or Mn; Y2 is one or two types of Co or Ni; and Y3 is one or two types of Ti or V, the master alloy comprises any one combination of X1-Y1, X1-Y2, X1-Y3, X2-Y1, and X2-Y2 of the foregoing constituent elements. The present invention consequently yields superior effects of being able to obtain a sintered sputtering target with few defects and having a high-density and uniform alloy composition, and, by using this target, to realize the deposition of an alloy barrier film with uniform quality and few particles at a high speed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.