Method for polishing a semiconductor wafer

US10707069B2 · kind B2 · utility

Assignee

• Siltronic AG · DE

Inventors

• Juergen Schwandner · Garching bei München, DE
• Michael Kerstan · Burghausen, DE

Key dates

• Filing date: Mar 2, 2011
• Grant date: Jul 7, 2020
• Expiry date: Dec 28, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02024
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of polishing a semiconductor wafer includes polishing a surface of the semiconductor wafer using a polishing pad while supplying a polishing agent slurry containing abrasives during a first step. The polishing pad is free of abrasives and includes a first surface that contacts the semiconductor wafer, the first surface having a surface structure including elevations. Supply of polishing agent slurry is subsequently ended and, in a second step, the surface of the semiconductor wafer is polished using the polishing pad while supplying a polishing agent solution having a pH value of at least 12 that is free of solids.