Methods of forming semiconductor devices, and related semiconductor devices, memory devices, and electronic systems
US10707215B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 22, 2018 |
| Grant date | Jul 7, 2020 |
| Priority date | — |
| Expiry date | Aug 22, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/4091
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprises semiconductive pillars; digit lines laterally between the semiconductive pillars; nitride caps vertically overlying the digit lines; nitride structures overlying surfaces of the nitride caps; redistribution material structures comprising upper portions overlying upper surfaces of the nitride caps and the nitride structures, and lower portions overlying upper surfaces of the semiconductive pillars; a low-K dielectric material laterally between the digit lines and the semiconductive pillars; air gaps laterally between the low-K dielectric material and the semiconductive pillars, and having upper boundaries below the upper surfaces of the nitride caps; and a nitride dielectric material laterally between the air gaps and the semiconductive pillars. Memory devices, electronic systems, and method of forming a semiconductor device are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.