Inventor · Shanghai, CN

Guangjun Yang

39Patents
3h-index
27Co-inventors
59Inventor score

Filing activity: May 23, 2012 → Sep 7, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US9754946B1 Methods of forming an elevationally extending conductor laterally between a pair of conductive lines Electricity 21 Active
US10546862B1 Integrated assemblies having spacers of low permittivity along digit-lines, and methods of forming integrated assemblies Electricity 6 Active
US9082486B2 Row decoding circuit and memory Physics 3 Active
US9640252B1 Method of operating flash memory unit Electricity 3 Active
US11239242B2 Integrated assemblies having dielectric regions along conductive structures, and methods of forming integrated assemblies Electricity 3 Active
US10418275B1 Methods of sealing openings, and methods of forming integrated assemblies Electricity 2 Active
US8942044B2 Flash memory device Physics 1 Active
US10707215B2 Methods of forming semiconductor devices, and related semiconductor devices, memory devices, and electronic systems Physics 1 Active
US10290534B1 Methods of sealing openings, and methods of forming integrated assemblies Electricity 1 Active
US10347643B1 Methods of forming integrated assemblies having dielectric regions along conductive structures Electricity 1 Active
US8755231B2 Flash memory Physics 0 Active
US9337723B2 Charge pump system and memory Physics 0 Active
US10700073B2 Integrated assemblies having dielectric regions along conductive structures, and methods of forming integrated assemblies Electricity 0 Active
US9105587B2 Methods of forming semiconductor structures with sulfur dioxide etch chemistries Electricity 0 Active
US9030891B2 Charge pump circuit and memory Physics 0 Active
US11563008B2 Integrated memory with redistribution of capacitor connections, and methods of forming integrated memory Electricity 0 Active
US9406685B2 Flash memory unit and memory array, and programming, erasing and reading method thereof Physics 0 Active
US9202582B1 Flash-memory low-speed read mode control circuit Physics 0 Active
US10978295B2 Epitaxial growth on semiconductor structures Electricity 0 Active
US12363888B2 Memory circuitry and method used in forming memory circuitry Electricity 0 Active
US9153322B2 Memory array device and method for reducing read current of the same Physics 0 Active
US10790185B2 Methods of sealing openings, and methods of forming integrated assemblies Electricity 0 Active
US10957399B2 Memory and operation method thereof Electricity 0 Active
US11114937B2 Charge pump circuit Electricity 0 Active
US11476255B2 Method used in forming an array of vertical transistors and method used in forming an array of memory cells individually comprising a vertical transistor and a storage device above the vertical transistor Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.