Semiconductor device
US10707312B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 31, 2018 |
| Grant date | Jul 7, 2020 |
| Priority date | — |
| Expiry date | Sep 13, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/118
Abstract
According to one embodiment, there is provided a semiconductor device including a semiconductor substrate, a plurality of first columnar bodies having a peripheral edge, each of the columnar bodies spaced from one another on the semiconductor substrate, each including a first conductive layer extending from an upper end thereof in the depth direction of the semiconductor substrate, a base layer deposited about an outer peripheral surface of an upper end of the plurality of first columnar bodies, a gate adjacent to the base layer with a gate insulating film therebetween, a source layer connected to the base layer, and a second columnar body, including a second conductive layer, surrounding an outer peripheral edge of the plurality of first columnar bodies and extending in the depth direction of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.