RF amplifier with impedance matching components monolithically integrated in transistor die

US10707818B1 · kind B1 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Helmut Brech · Lappersdorf, DE
• Richard Wilson · معلمی نژاد, US

Key dates

• Filing date: Dec 13, 2018
• Grant date: Jul 7, 2020
• Expiry date: Dec 31, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H03F2200/451
• WIPO field: Basic communication processes
• WIPO sector: Electrical engineering

Abstract

A packaged amplifier circuit includes an RF package with a die pad, and RF input and output leads extending away from the die pad opposite directions. An RF transistor die is mounted on the die pad such that a first outer edge side of the RF transistor die faces the first RF lead and a second outer edge side of the RF transistor die faces the second RF lead. A passive electrical connector is integrally formed in the RF transistor die. The passive electrical connector includes a first end connection point closer to the first outer edge side, and a second end connection point closer to the second outer edge side. A first discrete reactive device is mounted on the die pad between the first outer edge side and the first RF lead. The passive electrical connector electrically couples the first discrete reactive device to the second RF lead.