Method for adhering a first structure and a second structure
US10710192B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 13, 2016 |
| Grant date | Jul 14, 2020 |
| Priority date | — |
| Expiry date | Oct 23, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/83948
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method includes steps a) providing the first structure successively including a first substrate, a first layer made from a metal base and a first metal-based metal oxide, b) providing the second structure successively including a second substrate, a second layer made from a second material and a second metal-based metal oxide, the first and second metal oxides presenting a standard free enthalpy of formation ΔG°, the second material being chosen so that it has an oxide presenting a standard free enthalpy of formation strictly less than ΔG°, c) bonding the first structure and second structure by direct adhesion, d) activating diffusion of the oxygen atoms of the first and second metal oxides to the second layer so as to form the oxide of the second material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.