Hybrid metrology for patterned wafer characterization
US10712145B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 19, 2017 |
| Grant date | Jul 14, 2020 |
| Priority date | — |
| Expiry date | Mar 31, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01B2210/56
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Methods and systems for evaluating the geometric characteristics of patterned structures are presented. More specifically, geometric structures generated by one or multiple patterning processes are measured by two or more metrology systems in accordance with a hybrid metrology methodology. A measurement result from one metrology system is communicated to at least one other metrology systems to increase the measurement performance of the receiving system. Similarly, a measurement result from the receiving metrology system is communicated back to the sending metrology system to increase the measurement performance of the sending system. In this manner, measurement results obtained from each metrology system are improved based on measurement results received from other cooperating metrology systems. In some examples, metrology capability is expanded to measure parameters of interest that were previously unmeasurable by each metrology system operating independently. In other examples, measurement sensitivity is improved and parameter correlation is reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.