Methods of forming patterns using compositions for an underlayer of photoresist
US10712662B2 · kind B2 · utility
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14Claims
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Key dates
| Filing date | Jan 13, 2017 |
| Grant date | Jul 14, 2020 |
| Priority date | — |
| Expiry date | Mar 11, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/094
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of forming a pattern is disclosed. The method includes preparing a composition that includes a solvent and a polymer including a repeating unit in which at least one isocyanurate unit having a first structure is connected to another isocyanurate unit having a second structure different from the first structure; applying the composition on a substrate to form an underlayer; forming a photoresist layer on the underlayer; etching the photoresist layer to form a photoresist pattern; and patterning the substrate using the photoresist pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.