Semiconductor plug protected by protective dielectric layer in three-dimensional memory device and method for forming the same

US10714493B2 · kind B2 · utility

Assignee

• YANGTZE MEMORY TECHNOLOGIES CO., LTD. · CN

Inventors

• Haohao Yang · 红钢城街道, CN
• Yong Zhang · Tangxia, CN
• Enbo Wang · Hubei, CN
• Ruo Fang Zhang · 红钢城街道, CN
• Fushan Zhang · Hockessin, US
• Qianbin Xu · 红钢城街道, CN

Key dates

• Filing date: Nov 16, 2018
• Grant date: Jul 14, 2020
• Expiry date: Dec 25, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D88/00
• WIPO field: Computer technology
• WIPO sector: Electrical engineering

Abstract

Embodiments of 3D memory devices with a semiconductor plug protected by a dielectric layer and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a memory stack including a plurality of interleaved conductor layers and dielectric layers on the substrate, and a memory string extending vertically through the memory stack. The memory string includes a semiconductor plug in a lower portion of the memory string, a protective dielectric layer on the semiconductor plug, and a memory film above the protective dielectric layer and along a sidewall of the memory string.