Enbo Wang
18Patents
2h-index
34Co-inventors
46Inventor score
Filing activity: Aug 19, 2014 → Apr 7, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10658378B2 | Through array contact (TAC) for three-dimensional memory devices | Electricity | 4 | Active |
| US10714493B2 | Semiconductor plug protected by protective dielectric layer in three-dimensional memory device and method for forming the same | Electricity | 2 | Active |
| US10892280B2 | Inter-deck plug in three-dimensional memory device and method for forming the same | Electricity | 1 | Active |
| US10741578B2 | Inter-deck plug in three-dimensional memory device and method for forming the same | Electricity | 1 | Active |
| US10937806B2 | Through array contact (TAC) for three-dimensional memory devices | Electricity | 1 | Active |
| US10419991B2 | Data transmission method and system, and related apparatus | Electricity | 1 | Active |
| US10679985B2 | Three-dimensional memory device having semiconductor plug formed using backside substrate thinning | Electricity | 1 | Active |
| US10665500B1 | Methods of semiconductor device fabrication | Electricity | 0 | Active |
| US9900259B2 | Data transmission method and related apparatus to compress data to be transmitted on a network | Electricity | 0 | Active |
| US9602632B2 | Content encoding pre-synchronization method, device and system | Electricity | 0 | Active |
| US10299164B2 | Protocol stack adaptation method and apparatus | Electricity | 0 | Active |
| US11716843B2 | Method for forming contact structures in three-dimensional memory devices | Electricity | 0 | Active |
| US10651193B2 | Memory device and forming method thereof | Electricity | 0 | Active |
| US11805643B2 | Method of fabrication thereof a multi-level vertical memory device including inter-level channel connector | Electricity | 0 | Active |
| US11145667B2 | 3D NAND memory device and method of forming the same | Electricity | 0 | Active |
| US11894995B2 | Data processing method and apparatus | Electricity | 0 | Active |
| US11737263B2 | 3D NAND memory device and method of forming the same | Electricity | 0 | Active |
| US11502094B2 | Multi-level vertical memory device including inter-level channel connector | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.