Semiconductor device with stripe-shaped trench gate structures, transistor mesas and diode mesas

US10714609B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Thomas Aichinger · Faak am See, AT
• Dethard Peters · Edenkoben, DE
• Ralf Siemieniec · Villach, AT

Key dates

• Filing date: Apr 16, 2019
• Grant date: Jul 14, 2020
• Expiry date: Apr 16, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D8/00

Abstract

A semiconductor device includes a plurality of gate trenches formed in a first surface of a semiconductor body and extending lengthwise parallel to one another, transistor cells and diode regions formed in a mesa of the semiconductor body between neighboring ones of the gate trenches, and a drift region in the semiconductor body beneath the gate trenches. Each transistor cell includes a source zone and a body region. Each diode region includes a contact portion and a lower doped shielding portion. The source zone forms a first p-n junction with the body region, and the body region forms a second p-n junction with the drift region. The contact region extends to the first surface, and the shielding portion forms a third p-n junction with the drift region. The shielding portion extends under bottoms of the neighboring ones of the gate trenches.