Selective cyclic dry etching process of dielectric materials using plasma modification

US10720334B2 · kind B2 · utility

Assignee

• ASM IP Holding B.V. · NL

Inventors

• René Henricus Jozef Vervuurt · Leuven, BE
• Nobuyoshi Kobayashi · Tokyo, JP
• Takayoshi Tsutsumi · Nagoya, JP
• Masaru Hori · Nagoya, JP

Key dates

• Filing date: Jul 20, 2018
• Grant date: Jul 21, 2020
• Expiry date: Jul 20, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/32137
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In some embodiments, a selective cyclic (optionally dry) etching of a first surface of a substrate relative to a second surface of the substrate in a reaction chamber by chemical atomic layer etching comprises forming a modification layer using a first plasma and etching the modification layer. The first surface comprises carbon and/or nitride and the second surface does not comprise carbon and/or nitride.