Group III nitride epitaxial substrate and method for manufacturing the same
US10727303B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 11, 2012 |
| Grant date | Jul 28, 2020 |
| Priority date | — |
| Expiry date | Jul 27, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01335
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a Group III nitride epitaxial substrate that can suppress the occurrence of breakage during a device formation process and a method for manufacturing the same. A Group III nitride epitaxial substrate according to the present invention includes a Si substrate, an initial layer in contact with the Si substrate, and a superlattice laminate, formed on the initial layer, including a plurality of sets of laminates, each of the laminates including, in order, a first layer made of AlGaN with an Al composition ratio greater than 0.5 and 1 or less and a second layer made of AlGaN with an Al composition ratio greater than 0 and 0.5 or less. The Al composition ratio of the second layer progressively decreases with distance from the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.