Memory device latch circuitry
US10734067B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 26, 2019 |
| Grant date | Aug 4, 2020 |
| Priority date | — |
| Expiry date | Aug 26, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/4402
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Latch circuitry configured to latch data for use in the memory device. The latch circuitry includes latch cells each configured to store a bit of the data. The latch circuitry also includes a data line coupled to a first side of the latch cells and a data false line coupled to a second side of the latch cells. The latch circuitry also includes a write driver that includes an input configured to receive the data to be stored in the latch cells and a pair of inverters coupled to the input and configured to output a data signal to a first side of the latch cells. The latch circuitry also includes an inverter coupled to the input and configured to generate a data false signal to a second side of the latch cells. The data used to generate the data false signal is not passed through the pair of inverters.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.