Plasma film forming method
US10734219B2 · kind B2 · utility
0Cited by
4References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 26, 2018 |
| Grant date | Aug 4, 2020 |
| Priority date | — |
| Expiry date | Sep 26, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3323
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Examples of a plasma film forming method include repeating feeding material gas onto a substrate placed on a susceptor via a shower head provided to oppose the susceptor, performing plasma film formation on the substrate by applying high frequency power to the shower head while providing reactant gas onto the substrate, and performing post-purge of discharging the gas used in the plasma film formation while heating the shower head, for a time longer than 0.1 seconds, a plurality of times in this order.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.