Substrate processing method and substrate processing apparatus
US10734242B2 · kind B2 · utility
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5Claims
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Key dates
| Filing date | Jan 10, 2018 |
| Grant date | Aug 4, 2020 |
| Priority date | — |
| Expiry date | Apr 22, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/024
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a substrate processing method for performing predetermined processing on a substrate, which has a processing target film, accommodated in a processing chamber, as a luminous intensity of a predetermined wavelength in an emission spectrum of a plasma generated from a processing gas in the chamber, a luminous intensity of the predetermined wavelength which starts to change when actual processing of the processing target film is started is measured. Then, a processing time of the predetermined processing performed after a moment when the measured luminous intensity of the predetermined wavelength is changed, is set.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.