Etching method and substrate processing system
US10734243B2 · kind B2 · utility
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6Claims
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Key dates
| Filing date | Dec 13, 2017 |
| Grant date | Aug 4, 2020 |
| Priority date | — |
| Expiry date | Dec 13, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67745
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In an etching method for removing a processing target layer formed on a substrate for manufacturing electronic devices, a first break-through process of removing an oxide film formed on a surface of the processing target layer is performed, and a first main etching process of etching the processing target layer is performed after the first break-through process. Then, a second break-through process of removing the oxide film exposed after the first main etching process is performed, and a second main etching process of etching the processing target layer is performed after the second break-through process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.