Methods of making semiconductor devices
US10734370B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2019 |
| Grant date | Aug 4, 2020 |
| Priority date | — |
| Expiry date | Apr 26, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/18161
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of making semiconductor device packages may involve cutting kerfs in streets between regions of a semiconductor wafer and positioning stacks of semiconductor dice on portions of surfaces of at least some adjacent regions. A protective material may be dispensed only between the stacks of the semiconductor dice, over the exposed remainders of the regions, and in the kerfs. A back side of the semiconductor wafer may be ground to a final thickness, revealing the protective material in the kerfs at a side of the semiconductor wafer opposite the stacks of the semiconductor dice. The protective material between the stacks of the semiconductor dice and within the kerfs may be cut through, leaving the protective material on sides of the semiconductor dice of the stacks and on side surfaces of the regions within the kerfs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.