Ferroelectric non-volatile memory

US10734408B2 · kind B2 · utility

Assignee

• Sandisk Technologies, Inc. · US

Inventors

• Yingda Dong · San Jose, US
• Yangyin Chen · Leuven, BE
• Yukihiro Sakotsubo · Yokkaichi, JP

Key dates

• Filing date: Sep 24, 2019
• Grant date: Aug 4, 2020
• Expiry date: Sep 24, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/037

Abstract

A non-volatile memory system is provided that includes a plurality of NAND strings of non-volatile storage elements, each non-volatile storage element including a control gate, a tunneling layer, a floating gate, and a blocking layer including a ferroelectric material. The tunneling layer is disposed between the control gate and the floating gate, and the floating gate is disposed between the tunneling layer and the blocking layer.