Electronic device including a contact structure contacting a layer
US10741494B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 7, 2018 |
| Grant date | Aug 11, 2020 |
| Priority date | — |
| Expiry date | Nov 7, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electronic device can include a semiconductor layer and a contact structure forming an ohmic contact with the layer. In an embodiment, the semiconductor layer can include a III-N material, and the contact structure includes a first phase and a second phase, wherein the first phase includes Al, the second phase includes a metal, and the first phase contacts the semiconductor layer. In another embodiment, the semiconductor layer can be a monocrystalline layer having a surface along a crystal plane. The contact structure can include a polycrystalline material including crystals having surfaces that contact the surface of the monocrystalline layer, wherein a lattice mismatch between the surface of the monocrystalline layer and the surfaces of the crystals is at most 20%.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.