Joris Baele
7Patents
2h-index
7Co-inventors
44Inventor score
Filing activity: Jan 24, 2001 → Feb 16, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7709889B2 | Semiconductor device with improved breakdown properties and manufacturing method thereof | Electricity | 15 | Active |
| US8115273B2 | Deep trench isolation structures in integrated semiconductor devices | Electricity | 5 | Active |
| US6544889B2 | Method for tungsten chemical vapor deposition on a semiconductor substrate | Electricity | 1 | Expired |
| US10741494B2 | Electronic device including a contact structure contacting a layer | Electricity | 1 | Active |
| US11721736B2 | Electronic device including a gate structure and a process of forming the same | Electricity | 0 | Active |
| US9768247B1 | Semiconductor device having improved superjunction trench structure and method of manufacture | Electricity | 0 | Active |
| US12068406B2 | HEMT devices with reduced size and high alignment tolerance | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.